samhop microelectronics corp. stu/d458s symbol v ds v gs i dm a i d units parameter 40 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 40v 48a 11 @ vgs=4.5v 8 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed b a www.samhop.com.tw mar,02,2011 1 details are subject to change without notice. t c =25 c g g s s d d g g s s stu series to-252aa(d-pak) std series to-251(i-pak) w p d c -55 to 150 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 3 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy d t c =70 c w a a a a 93 48 147 42 g r e r r p p r p p o r r er
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) v 6.2 g fs s c iss 1360 pf c oss 240 pf c rss 200 pf q g 28 nc 42 64 41 t d(on) 31 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching characteristics v dd =20v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =24a v ds =10v , i d =24a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =32v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =19a 8 8.6 11 m ohm c f=1.0mhz c stu/d458s www.samhop.com.tw mar,02,2011 2 v sd nc q gs nc q gd 2.8 10 gate-drain charge gate-source charge diode forward voltage v ds =20v,i d =24a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =5a 0.77 1.3 v notes nc 15.5 v ds =20v,i d =24a,v gs =10v v ds =20v,i d =24a,v gs =4.5v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v.(see figure13) _ _ _ 1 1.9 3 100 ver 1.0
stu/d458s ver 1.0 www.samhop.com.tw mar,02,2011 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =3.5v v gs =4v v gs =10v v gs =4.5v 60 48 36 24 12 0 0 0.7 4.2 3.5 2.8 2.1 1.4 25 c tj=125 c -55 c 18 15 12 9 6 3 0.1 1 20 40 60 80 100 v gs =10v v gs =4.5v 2.0 1.8 1.6 1.4 1.2 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =24a v gs =4.5v i d =19a v ds =v gs i d =250ua 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150
stu/d458s ver 1.0 www.samhop.com.tw mar,02,2011 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0 24 20 16 12 8 4 0 2 468 10 i d =24a 25 c 75 c 125 c 60 10 1 0 0.25 0.50 0.75 1.00 1.25 25 c 125 c 75 c ciss coss crss 2400 2000 1600 1200 800 400 0 10 15 20 25 30 0 5 v ds =20v i d =24a 0 10 8 6 4 2 0 5 10 15 20 25 30 35 40 td(on) 110 100 1 10 100 300 vds=20v,id=1a vgs=10v td(off ) tr tf 0.1 1 10 40 10 1 0.1 100 v gs =10v single pulse t a =25 c 1ms r d s ( on) limit 100 us 1000 dc 10ms
stu/d458s ver 1.0 www.samhop.com.tw mar,02,2011 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve t p i as figure 13a. uncamped inductive test circuit unclamped inductive waveforms r g i as 0.01 t p d.u.t l v ds + - 20v v dd figure 13b. v (br)dss 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. 2. 3. 4. single pulse 1 r ja r ja(t)=r(t)* r ja=see datasheet t jm -t a =p dm * r ja(t) duty cycle,d= t 1 / t 2
stu/d458s ver 1.0 www.samhop.com.tw mar,02,2011 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 10.830 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 11.430 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.426 0.450 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035
stu/d458s ver 1.0 www.samhop.com.tw mar,02,2011 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067
stu/d458s ver 1.0 www.samhop.com.tw mar,02,2011 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 "a " to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h
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